BC846-BC850 : NPN Silicon af Transistors ( For af Input Stages And Driver Applications High Current Gain ).
BSH106 : BSH106; N-channel Enhancement Mode MOS Transistor. Very low threshold voltage Fast switching Logic level compatible Subminiature surface mount package N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH106 is supplied.
BU505 : High Voltage NPN Multiepitaxial Fast-switching Transistor. HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES The is a high voltage NPN fastswitching transistor designed to be used in lighting application, like electronic ballast for fluorescent lamps. Its characteristics make it also ideal for power supplies.
BUK204-50Y : TopFET High Side Switch SMD Version of Buk200-50y: 50v, 10a. Monolithic temperature and overload protected power switch based on MOSFET technology a 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL IL SYMBOL VBG IL Tj RON PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance.
FS2UM-18A : N-channel Power MOSFET High-speed Switching Use: 900v, 2a. APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th).
SIDC03D120F6 : HV Chips. Used For Fast IGBT2. : 1200V EMCON technology 120 µm chip soft, fast switching low reverse recovery charge small temperature coefficient This chip is used for: EUPEC power modules and discrete devices Applications: SMPS, resonant applications, drives MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips.
CM1000DU-34NF : Mega Power Dual™ IGBTMOD Powerex IGBTMOD™ Modules are designed for use in switching two IGBT applications. Each module consists of a half-bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system.
JANC1N962B : 11 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE.
RPC20 : RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 5; 10; 20 %, 100; 200 ppm, 0.27 ohm - 22000000 ohm, SURFACE MOUNT, 0805. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP ; Operating DC Voltage: 150 volts ; Operating Temperature: -55 to 155 C (-67.
RPE210 : CAPACITOR, CERAMIC, 25; 50; 100 V, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Through Hole ; Operating Temperature: -55 to 125 C (-67 to 257 F).
TPCP8405 : 6500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0290 ohms ; Package Type: 2-3V1S, 8 PIN ; Number of units in IC: 2.
UT131-5 : TRIAC,500V V(DRM),1A I(T)RMS,TO-92. s: Thyristor Type: Triac. Passivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers. logic integrated circuits and other low power gate trigger circuits. Repetitive Peak Off-State Voltage UT131-6 UT131-8 RMS On-State.
502R30 : CAPACITOR, CERAMIC, MULTILAYER, 5000 V, SURFACE MOUNT, 2211. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).
933505290235 : VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET. s: Polarity: N-Channel ; V(BR)DSS: 20 volts ; Package Type: PLASTIC, SMD, SST3, 3 PIN ; Number of units in IC: 1.
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