RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1
RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1
RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1

RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1

NEW

Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1 Parameter Level Value Unit Supply situation Discontinued Drain Voltage Typ 12.5 V Freqency 30 MHz Output Power (Min) 100 W Package Ceramic(Large) Input Power (Typ) 7000 W Drain Efficiency (Min) 55 % Feature - RoHS Directive Compliant with RoHS (2011/65/EU、(EU) 2015/863) Remarks RoHS : Restriction of the use of c

Stock Status:1285
Minimum:1
≥1:
US $31.2011
US $29.32903
≥6:
US $29.47966
US $27.71088
≥21:
US $28.40376
US $26.69953
Inquiry 
Brand:
Mitsubishi
DateCode:
2018+
Package / Case:
Ceramic(Large)
Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1 Parameter Level Value Unit Supply situation Discontinued Drain Voltage Typ 12.5 V Freqency 30 MHz Output Power (Min) 100 W Package Ceramic(Large) Input Power (Typ) 7000 W Drain Efficiency (Min) 55 % Feature - RoHS Directive Compliant with RoHS (2011/65/EU、(EU) 2015/863) Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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Reviews

Glenroy Miller
Registration years:10 years
United States
United States
Ft Lauderdale
Awesome!!!
RUBYCON 35V3300UF 16X25MM DIP Capacitors 35PX3300MEFC16X25G4BC40UFES8JTBC850CMMBT3904LT3GON Semiconductor/ON MMBTA06LT3G(20pcs)FQP30N06LMUR1620MUR1620CTGFT232RL-REELRURP3060(20pcs) DIP Carbon Film Resistor 5% 3W 220Ω(220R)(20pcs) DIP Carbon Film Resistor 5% 3W 470Ω(470R)(20pcs) DIP Carbon Film Resistor 5% 3W 1Ω(1R)(10pcs) DIP Aluminum Electrolytic Capacitor 25V 2200uF 13*21mm2SC18152SA1015IRFI4212H-117PTL072C072CKA7912IR2010SRD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1MURS120T3ZS4763AFR107IRFZ48V2SA940A1695 , C4468MPSA13LM4558
0
0
0
JUAN CARLOS FIGUEROA FJA
Registration years:1 years
United States
United States
Miami Florida
Very satisfied with
Chip Aluminum Electrolytic Capacitor Package, 28 kinds each 5pcs Total 125pcsRJH60F7IKCM20L60GDIKCM20L60GDRECTIFIER BRIDGE GBJ1510 15A 1000V DIP4Rectifier Bridge KBL610 6A 1000VRECTIFIER BRIDGE GBJ1010 10A 1000V DIP4GBJ2510ULN2003PS2501EL816MOC3052MOC3062MOC3063BC517BC54950V Ceramic Capacitor Package, 40 kinds each 20pcs Total 800pcsS9013RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1S9014BTA12-600BBT134-600ELNK306PN7905A1N4002P6201/2W Metal Film Resistor Pack,127 Kinds,Each 10pcs,Total 1270pcs,Sample Book.1N5408LM3172N2222S9012
0
0
0
mauricio galvez ve17343
Registration years:3 years
United States
United States
miami
Very satisfied with
STK433-060SCM1110MFRT6917GQWMIP2F2STRX6757SCS210AMIHW30N135R3CLA50E1200HBP280840TPS12ATYN612RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1UMX1NTNMPS651MPS751IGCM04G60HABD9276EFV-GE2IRS21850STRPBFP4004EDP2904BDMUR4100EGRJK03B7DPA-00#J53SF10A400HSSC9101NCP1396AGSG3525ANTSUMV56RUU-Z1FGD4536IRFB41152SC5359
0
0
0
Oleksandr Bilobrov
Registration years:8 years
Ukraine
Ukraine
Kyiv
Very satisfied with
RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1RD100HHF1
0
0
0
Каплиев Василий Дмитриеви
Registration years:2 years
Russia
Russia
Морозовск
Ok`
2SC3133RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF12SC19732SC2026-K2SC3133RD15HVF1
0
0
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