RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1
RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1
RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1

RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1

Third-party original

Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1 Parameter Level Value Unit Supply situation Discontinued Drain Voltage Typ 12.5 V Freqency 30 MHz Output Power (Min) 100 W Package Ceramic(Large) Input Power (Typ) 7000 W Drain Efficiency (Min) 55 % Feature - RoHS Directive Compliant with RoHS (2011/65/EU、(EU) 2015/863) Remarks RoHS : Restriction of the use of c

Stock Status:1285
Minimum:1
≥1:
US $28.33416
US $26.63411
≥6:
US $26.7709
US $25.16464
≥21:
US $25.79386
US $24.24622
Inquiry 
Brand:
Mitsubishi
DateCode:
2018+
Package / Case:
Ceramic(Large)
Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1 Parameter Level Value Unit Supply situation Discontinued Drain Voltage Typ 12.5 V Freqency 30 MHz Output Power (Min) 100 W Package Ceramic(Large) Input Power (Typ) 7000 W Drain Efficiency (Min) 55 % Feature - RoHS Directive Compliant with RoHS (2011/65/EU、(EU) 2015/863) Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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Reviews

Oleksandr Bilobrov
Registration years:7 years
Ukraine
Ukraine
Kyiv
Very satisfied with
RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1RD100HHF1
0
0
0
Каплиев Василий Дмитриеви
Registration years:1 years
Russia
Russia
Морозовск
Ok`
2SC31332SC19732SC2026-KRD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF12SC3133RD15HVF1
0
0
0
Беспалов Виктор Павлович
Registration years:1 years
Russia
Russia
Серпухов
Very satisfied with
Main slave bluetooth module wireless bluetooth serial port transmission module communication HC-06.AD8307G5V-1-5VDC 5V 1A 6PINSATMEGA328P-20AUSA612ADLTM455GWJiangsu Qin Heng CH340GXI'AN Aerosemi Tech MT3608(5pcs)BSS138NH6327RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1Fortune Semicon FS8205AFortune Semicon DW01A-G(5pcs)Nanjing Extension Microelectronics TP4056Murata Electronics CSTCE12M0G52-R0Murata Electronics CSTCE16M0V53Z-R0KEMET C0805F104K5RAC7800(50pcs)
0
0
0
Michele Fichera
Registration years:4 years
Italy
Italy
Milo
Ok
MMBD6100LT1IR21365SBSM20GP60MC34152PHCPL-3120VBSM20GP60MC34152PRD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1HCPL-3120VBSM20GP60MC34152PHCPL-3120VBSM20GP60MC34152PHCPL-3120VPM20CMA0606MBI20GS-060BSM20GP60MC34152PHCPL-3120V2KBP06MBSM20GP60MC34152PHCPL-3120VHG20N60B3BSM20GP60MC34152PHCPL-3120VBSM20GP60HCPL-3120VMC34152P
0
0
0
Serge Deleanu
Registration years:1 years
Moldova
Moldova
Chisinau
:-)
Jinzhou Kaimei Power HP-2R7-J106UY1N5820RD100HHF1,RD100HHF1-101,Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1SN74LVC245ANSP3497EEN-LCD74ACT05ELittelfuse 0251003.MXLKA431AZTASFH4244-ZLM2586T-ADJAP4920MSC464AYBSIS85C49685C49774LS245N74LS244N DIP20BUK7614-55A85C497SIS85C496DS12885INIC-1607E-C11KM68257BP-20MC146818P88PG847EB1-NAM1SFH4244-ZSFH325FA-ZP4C188-20PC74HCT688NSN74HCT245NSN74ALS573BN74LS04N
0
0
0